Sicxny
WebA Brief Review of Transparent Conducting Oxides (TCO): The Influence of Different Deposition Techniques on the Efficiency of Solar Cells Web@article{Xiao2000StructuralAA, title={Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N2 and Ar}, author={Xingcheng Xiao …
Sicxny
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WebA large research reactor for performing dielectric barrier discharge (DBD) experiments at atmospheric pressure (AP) has been used with argon (Ar) carrier gas under constant plasma conditions (f = 20 kHz, Va(f) = 8 kVp-p = 2.8 kVrms). WebSHIANG-TAI LIN 研究人員網路 瀏覽統計 Email 通知 RSS Feed 瀏覽統計 Email 通知 RSS Feed
WebApr 19, 2024 · GRAPHICAL ABSTRACT ABSTRACT Two aminosilanes derived from hexamethyldisilazane as chemical vapor deposition (CVD) precursors for SiCxNy and relevant films have been reported and characterized by 1H, 13C, and 29Si NMR as well as by EI-MS and elemental analysis, where necessary. Thermal stability, transport behavior and … WebIt was found that the best periodic structures and greatest content of SiCxNy nanoparticles occur in the case in which the sublayer thickness of SiCxNy and AlN are 42 and 3 nm, respectively. In this case, the NPSLs exhibit strong photoluminescence (PL) either before or after annealing.
WebThe magnetic SiCxNy:Fe films with tunable resistance and magnetization was studied. • Variation of Fe doping leads to change the conductance by more than 8 orders of value. • … WebMar 30, 2024 · The effect of a-SiCxNy:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH4, CH4, and NH3 as the precursors, on the stability and photoluminescence of CsPbBr3 quantum dots (QDs) were investigated in this study. The results show that a …
WebThe silicon-nitrogen material system, primarily in the form of silicon nitride (SiN x) and silicon silicon carbo-nitride (SiN x C y) (where 0<1.33 and 0<1) continues to witness …
WebWe developed a novel process for the atomic layer deposition (ALD) of SiC x N y films using a Si 2 Cl 6 and a CH 3 NH 2 plasma. Under self-limiting growth conditions, this ALD … hoivasilta lempääläWebMar 22, 2004 · DOI: 10.1016/J.TSF.2003.10.125 Corpus ID: 98722583; IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface passivation @article{Vetter2004IRstudyOA, title={IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface passivation}, author={Michael Vetter and Isidro Mart{\'i}n and Albert Orpella and Joaquim Puigdollers and Crist{\'o}bal Voz and … hoivatahtoWebThe effect of a-SiCxNy:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with … hoiva sofiaWebSiCN ceramics are one of the most important electromagnetic wave (EMW) absorbing materials for application in harsh environments, but research studies on optimizing phase … hoivasängytWebThe 3-dimensional stress state of inlaid copper line structures in low-k dielectrics was measured using synchrotron micro X-ray diffraction (μ-XRD) at temperatures between 25 deg. C and 450 deg. C. The barrier layer (Ta or TaN/Ta) had only a low impact on the stres hoivassiltaWebJul 24, 2024 · We developed a novel process for the atomic layer deposition (ALD) of SiC x N y films using a Si 2 Cl 6 and a CH 3 NH 2 plasma. Under self-limiting growth conditions, this ALD process led to SiC x N y films with up to 9 atomic percent carbon with a conformality >95% in 5:1 aspect ratio nanostructures. The surface reactions during ALD, and in … hoiva sofia oyWebAmorphous ferromagnetic materials with variable composition are promising candidates for application in rapidly-growing technological fields, such as spintronics. However, the … hoivateknologia